Summary:
Passive imaging systems and radiometers require highly sensitive detectors that can operate at millimeter-wave frequencies. Biased Schottky diodes are commonly used for these applications, but the required biasing circuit greatly increases the system and pixel complexity and also leads to extra noise and drift. Zero-bias diode detectors are advantageous because no biasing circuit is required, but they require a large zero bias nonlinearity or curvature. Discrete Ge backward diodes and planar-doped barrier GaAs diodes have previously been used for zero bias detection with high nonlinearity. However, because of the chosen substrates, these devices are not readily suitable for imaging applications, where a mass-producible technology is required to fabricate a large number of identical devices into compact pixilated imaging arrays.
Sb-based heterojunction backwards diodes are also excellent candidates for zero-bias detector applications due to their high sensitivity, high bandwidth, modest temperature dependence, and mass production capability. However, the high cost of Sb-based backward diodes and their incompatibly with mainstream Si read-out circuitry makes them undesirable for cost-sensitive applications and system-level integration.
In order to alleviate these issues, researchers at The Ohio State University have co-developed a Si-based backward diode that is affordable, mass-producible, and can be readily integrated with standard CMOS circuitry. The devices exhibit large zero bias curvature and a low zero biased junction resistance, all at room temperature. The combination of outstanding device performance and compatibility with Si-based electronics makes these devices ideal for highly sensitive imaging and radiometry applications.
Potential Applications:
- Passive imaging and radiometry systems
- Screening and detection of concealed weapons
- Vision enhancement for navigation through obscuring weather
Advantages:
- High zero-biased curvature, resulting in outstanding sensitivity
- Low zero-biased junction resistance
- Compatible with ubiquitous Si-based electronics
- Low cost and easily mass-producible