Summary:
Scanning capacitance microscopy (SCM) circuits, used for such applications as semiconductor characterization (including dopant profiling, device characterization, and surface defect characterization), are typically not adapted for calibrated, low frequency measurements of absolute capacitance. In fact, these implementations of SCM generally do not measure capacitance directly. Rather, they measure the change in capacitance versus the change in voltage (dC/dV) by varying the probe-sample voltage V at frequencies greater than 10 kHz. This is due to a voltage dependant capacitance resulting from a voltage-dependant space change layer in the semiconductor substrate. The Ohio State University has developed a system and method for performing scanning capacitance microscopy using an atomic force microscope (AFM) that measures direct capacitance at a frequency less then 10 kHz. The system exhibits high sensitivity with very low noise. Recent advancements to this technology have resulted in even higher sensitivity by enabling direct measurements of absolute capacitance at higher frequencies. The design of the circuit has also been simplified, enabling the use of off-the-shelf components such as function generators. This straightforward design will shorten the investment of time and money needed to commercialize this powerful system.
Potential Applications:
This system is an ideal tool for semiconductor characterization. It is also useful for measuring a wide variety of dielectric films such as SiO2 grown on Si, or for dielectric films on other semiconductor substrates such as Si3N4, Al2O3, TiO2, and ZrO2. It may also be used to measure thin lubricant films such as perfluoropolyethers, a widely used class of compounds for MEMS and hard disk drive lubrication. Other suitable types of samples include self-assembled monolayers.
Advantages:
- Enables direct capacitance measurements at low frequencies
- Low noise
- High sensitivity
- Straightforward yet powerful design
- Can also determine stray capacitance
